sot-363 plastic-encapsulate mosfets CJ7252KDW n channel + p channel power mosfet description this n channel + p channel mosfet has been designed using advanced power trench proc ess to optimize the r ds(on) . feature z high-side switching z low threshold z fast switching speed z including a 2n7002k and a cj502k mosfet (independently) in a package application z drivers:relays, solenoids, lamps, hammers, displays, memories z battery operated systems z power supply converter circuits z load/power switching cell phones, pagers marking: 75 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit n-channel mosfet v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d drain current -continuous 0.34 a i dm drain current - pulsed(note1) 1.36 a p- channel mosfet v ds drain-source voltage -50 v v gs gate-source voltage 20 v i d drain current -continuous -0.18 a i dm drain current ? pulsed (note1) -0.7 a power dissipation, temperature and thermal resistance p d power dissipation 0.15 w so t -363 1 of 3 sales@zpsemi.com www.zpsemi.com CJ7252KDW
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit n- channel mosfet static parameters drain-source breakdown voltage v (br)dss v gs =0v, i d =250a 60 v zero gate voltage drain current i dss v ds =48v,v gs = 0v 1 a v gs =20v, v ds = 0v 10 a v gs =10v, v ds = 0v 200 na gate-body leakage current i gss v gs =5v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =1ma 1 v v gs =4.5v, i d =0.2a 5.3 ? drain-source on-resistance (note 3) r ds(on) v gs =10v, i d =0.5a 5 ? diode forward voltage v sd i s =0.3a, v gs = 0v 1.5 v dynamic parameters (note 4) input capacitance c iss 40 pf output capacitance c oss 30 pf reverse transfer capacitance c rss v ds =10v,v gs =0v,f =1mhz 10 pf switching parameters (note 4) turn-on delay time t d(on) 10 ns turn-off delay time t d(off) v gs =10v,v dd =50v, r l =250 ? ,r gen =50 ? , 15 ns reverse recovery time t rr 30 ns recovered charge q r i s =300ma; d is /d t =-100a/s;v gs =0v; v r =25v 30 nc p- channel mosfet parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -50 v v ds =-50v,v gs = 0v -15 a zero gate voltage drain current i dss v ds =-25v,v gs = 0v -0.1 a gate-body leakage current i gss v gs =20v, v ds = 0v 10 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =-250a -0.9 -2 v r ja thermal resistance from junction to ambient (note2) 833 / w t j junction temperature 150 t stg storage temperature -55~+150 t l lead temperature 260 2 of 3 sales@zpsemi.com www.zpsemi.com CJ7252KDW
v gs =-5v, i d =-0.1a 10 ? drain-source on-resistance (note 3) r ds(on) v gs =-10v, i d =-0.1a 8 ? forward transconductance (note 3) g fs v ds =-25v, i d =-0.1a 0.05 s dynamic characteristics (note 4) input capacitance c iss 30 pf output capacitance c oss 10 pf reverse transfer capacitance c rss v ds =-5v,v gs =0v,f =1mhz 5 pf switching characteristics (note 4) turn-on delay time t d(on) 2.5 ns turn-on rise time t r 1 ns turn-off delay time t d(off) 16 ns turn-off fall time t f v dd =-15v, r l =50 ? , i d =-2.5a 8 ns source ? drain diode characteristics(note 4) continuous current i s -0.18 a pulsed current i sm -0.7 a diode forward voltage (note 3) v ds i s =-0.13a, v gs = 0v -2.2 v note: 1 surface mounted on fr-4 board using minimum pad size, 1oz copper 2 repetitive rating: pulse width limited by maximum junction temperature. 3 pulse test: pulse width 300 s, duty cycle 2% 4 these parameters have no way to verify. 3 of 3 sales@zpsemi.com www.zpsemi.com CJ7252KDW
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